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| VDS * * * * * * *G P-TO220-3-31 Tjmax G 1 G 1 2 3 G G SP000216298 TC TC tp VDD Tjmax Tjmax VDD EAR Tjmax Gate source voltage Power dissipation, TC = 25C Reverse diode dv/dt 7) VGS VGS Ptot dv/dt V/ns Rev. 2.8 P 2009-11-26 3 V DS Tj RthJC RthJA wavesoldering V(BR)DSS V GS V GS V DS Tj Tj V GS V GS Tj Tj VDS VGS RG Rev. 2.8 P 2009-11-26 3 Transconductance Input capacitance Output capacitance Reverse transfer capacitance g fs Ciss Coss Crss V DS V GS f V DS V GS V DS Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf V DD V GS RG Gate to source charge Gate to drain charge Qgs Qgd V DD V DD V GS V DD EAR f Coss Coss VDS VDS 7I <=I , di/dt<=400A/us, V SD D DClink=400V, Vpeak TC Inverse diode direct current, pulsed I SM VGS Reverse recovery time Reverse recovery charge Peak reverse recovery current t rr Q rr I rrm VR diF/dt Tj Rev. 2.8 P 2009-11-26 3 TC Ptot TC Ptot Ptot TC TC VDS TC TC VDS VDS Rev. 2.8 P 2009-11-26 3 tp tp tp tp VDS Tj VGS VDS Tj VGS VDS VDS Rev. 2.8 P 2009-11-26 3 f Tj VGS VGS Tj VGS VGS Rev. 2.8 P VGS 2009-11-26 3 Tj IF Tj V DD V(BR)DSS Tj Tj Rev. 2.8 P V(BR)DSS Tj 2009-11-26 f E AR VDS V GS f VDS Coss f VDS VDS Rev. 2.8 P 2009-11-26 3 Rev. 2.8 P 2009-11-26 SPP04N50C3 SPA04N50C3 PG-TO220-3-1, PG-TO220-3-21 Rev. 2.8 Page 11 2009-11-26 SPP04N50C3 SPA04N50C3 PG-TO220-3-31 (FullPAK) Rev. 2.8 Page 12 2009-11-26 SPP04N50C3 SPA04N50C3 Rev. 2.8 P 13 2009-11-26 |
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